BluGlass Announces Entry into GaN Laser Diode Business
a) 450 nm GaN laser diode mounted on thermo-electric cooler (TEC) and... | Download Scientific Diagram
Deep UV aluminium gallium nitride laser diode at 271.8nm wavelength
Reducing power losses in indium gallium nitride laser diodes on silicon
Room-Temperature Electrically Injected AlGaN-Based near-Ultraviolet Laser Grown on Si | ACS Photonics
Realization of 366 nm GaN/AlGaN single quantum well ultraviolet laser diodes with a reduction of carrier loss in the waveguide layers: Journal of Applied Physics: Vol 130, No 17
The structure of a standard InGaN / GaN laser diode with marked... | Download Scientific Diagram
Indium gallium nitride laser diode directly integrated with silicon
Semipolar GaN-based laser diodes for Gbit/s white lighting communication: devices to systems
World's smallest mass-produced GaN laser chip from silicon working substrate
Thermal analysis of GaN-based laser diode mini-array<xref rid="cpb_27_9_094208_fn1" ref-type="fn">*</xref><fn id="cpb_27_9_094208_fn1"><label>*</label><p>Project supported by the National Key Research and Development Program of China (Grant Nos ...
Figure 1 from Characterization Parameters of (InGaN/InGaN) and (InGaN/GaN) Quantum Well Laser Diode | Semantic Scholar
Researching | GaN-based ultraviolet microdisk laser diode grown on Si
A 350-nm-band GaN/AlGaN multiple-quantum-well laser diode on bulk GaN: Applied Physics Letters: Vol 107, No 15
Deep UV Laser at 249 nm Based on GaN Quantum Wells | ACS Photonics
Group III-nitride lasers: a materials perspective - ScienceDirect
Figure 1 from GaN-Based Blue Laser Diodes With 2.2 W of Light Output Power Under Continuous-Wave Operation | Semantic Scholar
Gallium Nitride (GaN) Laser Diodes
Laser slicing: A thin film lift-off method for GaN-on-GaN technology - ScienceDirect
Nanomaterials | Free Full-Text | Narrow-Linewidth GaN-on-Si Laser Diode with Slot Gratings
Structure of GaN laser. | Download Scientific Diagram
InGaN / GaN MQW Structure Epitaxial on Si for Violet LD
Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide<xref rid="cpb_26_12_124210_fn1" ref-type="fn">*</xref><fn id="cpb_26_12_124210_fn1"> <label>*</label> <p>Project supported by the ...
Semipolar (202¯1) GaN laser diodes operating at 388 nm grown by plasma-assisted molecular beam epitaxy - Advances in Engineering
BluGlass — Brighter future, lower temperature - Edison Group
High efficient GaN-based laser diodes with tunnel junction: Applied Physics Letters: Vol 103, No 4
